Method and apparatus for providing precursor gas to a processing chamber

ABSTRACT

In one embodiment, an apparatus for generating a gaseous chemical precursor used in a vapor deposition processing system is provided which includes a canister comprising a sidewall, a top, and a bottom encompassing an interior volume therein, an inlet port and an outlet port in fluid communication with the interior volume, and an inlet tube extending from the inlet port into the canister. The apparatus further may contain a plurality of baffles within the interior volume extending between the top and the bottom of the canister, and a precursor slurry contained within the interior volume, wherein the precursor slurry contains a solid precursor material and a thermally conductive material that is unreactive towards the solid precursor material. In one example, the solid precursor material solid precursor material is pentakis(dimethylamino) tantalum.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. Ser. No. 10/198,727(APPM/006798), filed Jul. 17, 2002, which is incorporated herein byreference in its entirety.

BACKGROUND OF THE INVENTION

1. Field of the Invention

Embodiments of the invention generally relate to a method and apparatusfor providing gas to a processing chamber.

2. Description of the Related Art

Integrated circuits have evolved into complex devices that can includemillions of transistors, capacitors and resistors on a single chip. Theevolution of chip design continually requires faster circuitry andgreater circuit density demanding increasingly precise fabricationprocesses. The precision processing of substrates requires precisecontrol of temperature, rate and pressure in the delivery of fluids usedduring processing. The control of these fluids is typically facilitatedusing a gas panel that contains various valves, regulators, flowcontrollers and the like.

Fluids used during processing are provided to the gas panel and liquidor gas is formed from a central gas source or a supply vessel positionedproximate the panel. Some process gases may be generated at or near thegas panel from a solid material through a sublimation process.Sublimation is generally a process through which a gas is produceddirectly from a solid at a certain pressure and temperature withoutpassing through a liquid state. Some gases that may be produced througha sublimation process include xenon difluoride, nickel carbonyl,tungsten hexacarbonyl, and pentakis(dimethylamino) tantalum (PDMAT)among others. As these materials tend to be very active and expensive,careful control of the sublimation process is required in order tomanage the generation of the sublimed solid without undue waste.

A conventional sublimation process is typically performed in a heatedvessel loaded or filled with a solid precursor material to be sublimed.As gas is needed, the vessel walls and/or tray supporting the solidprecursor material are heated and the gas is produced.

An alternative gas generation process includes mixing a solid or liquidprecursor material with a liquid. A carrier gas is then bubbled throughthe mixture to carry the generated process gas.

However, as the carrier gas is bubbled through or impacted againsteither a solid precursor or liquid/solid mixture, particulates from thesolid precursor and or liquid may become entrained in the carrier gasand transferred into the process chamber. Liquid or solid particulatesmay become a source of chamber or substrate contamination. Thus,reduction of particulates passing from precursor gas generator into aprocessing chamber would serve at least two purposes. First, such areduction in particulates would reduce substrate defects. Second, areduction in particulates would reduce the downtime required forcleaning the contaminated chamber surfaces.

Therefore, there is a need for an improved method and apparatus forproviding a precursor gas to a processing chamber.

SUMMARY OF THE INVENTION

One aspect of the present invention generally provides an apparatus forgenerating gas for a processing system. In one embodiment, the apparatusfor generating gas for a processing system includes a canistercontaining a precursor material. The canister includes a top, a bottom,and a sidewall defining an interior volume. The interior volume has anupper region and a lower region, wherein the lower region is at leastpartially filled by the precursor material. An inlet port and an outletport are formed through the canister and are in communication with theupper region. At least one baffle is disposed within the upper region ofthe canister between the inlet and outlet port.

In another aspect of the invention, a method for generating gas for aprocessing system is provided. In one embodiment, the method forgenerating gas includes the steps of providing a precursor materialcontained in the lower region of the canister, flowing a carrier gasfrom the inlet port through the upper region of the canister along anextended mean path to the outlet port, and heating the precursormaterial to generate a process gas.

BRIEF DESCRIPTION OF THE DRAWINGS

A more particular description of the invention, briefly summarizedabove, may be had by reference to the embodiments thereof that areillustrated in the appended drawings. It is to be noted, however, thatthe appended drawings illustrate only typical embodiments of thisinvention and are therefore not to be considered limiting of its scope,for the invention may admit to other equally effective embodiments.

FIG. 1 is a simplified schematic view of a processing system having oneembodiment of a gas generation system;

FIG. 2A is a sectional side view of one embodiment of a gas generationcanister;

FIG. 2B is a sectional top view of one embodiment of a gas generationcanister;

FIG. 3 is a sectional view of another embodiment of a gas generationcanister; and

FIG. 4 is a sectional side view of another embodiment of a gasgeneration canister.

To facilitate understanding, identical reference numerals have beenused, wherever possible, to designate identical elements that are commonto the figures.

DETAILED DESCRIPTION

FIG. 1 generally depicts a simplified schematic of a semiconductor waferprocessing system 120. The processing system 120 generally includes aprocessing chamber 106 coupled to a gas delivery system 104. Theprocessing chamber 106 may be any suitable processing chamber, forexample, those available from Applied Materials, Inc. located in SantaClara, Calif. Exemplary processing chambers include DPS CENTURA® etchchambers, PRODUCER® chemical vapor deposition chambers, and ENDURA®physical vapor deposition chambers, among others.

The gas delivery system 104 generally controls the rate and pressure atwhich various process and inert gases are delivered to the processingchamber 106. The number and types of process and other gases deliveredto the processing chamber 106 are generally selected based on theprocess to be performed in the processing chamber 106 coupled thereto.Although for simplicity a single gas delivery circuit is depicted in thegas delivery system 104 shown in FIG. 1, it is contemplated thatadditional gas delivery circuits may be utilized.

The gas delivery system 104 is generally coupled between a carrier gassource 102 and the processing chamber 106. The carrier gas source 102may be a local or remote vessel or a centralized facility source thatsupplies the carrier gas throughout the facility. The carrier gas source102 typically supplies a carrier gas such as argon, nitrogen, helium orother inert or non-reactive gas.

The gas delivery system 104 typically includes a flow controller 110coupled between the carrier gas source 102 and a process gas sourcecanister 100. The flow controller 110 may be a proportional valve,modulating valve, needle valve, regulator, mass flow controller or thelike. One flow controller 110 that may be utilized is available fromSierra Instruments, Inc., located in Monterey, Calif.

The source canister 100 is typically coupled to and located between afirst and a second valve 112, 114. In one embodiment, the first andsecond valves 112, 114 are coupled to the canister 100 and fitted withdisconnect fittings (not shown) to facilitate removal of the valves 112,114 with the canister 100 from the gas delivery system 104. A thirdvalve 116 is disposed between the second valve 114 and the processingchamber 106 to prevent introduction of contaminates into the processingchamber 106 after removal of the canister 100 from the gas deliverysystem 104.

FIGS. 2A and 2B depict sectional views of one embodiment of the canister100. The canister 100 generally comprises an ampoule or other sealedcontainer having a housing 220 that is adapted to hold precursormaterials 214 from which a process (or other) gas may be generatedthrough a sublimation or vaporization process. Some solid precursormaterials 214 that may generate a process gas in the canister 100through a sublimation process include xenon difluoride, nickel carbonyl,tungsten hexacarbonyl, and pentakis(dimethylamino) tantalum (PDMAT),among others. Some liquid precursor materials 214 that may generate aprocess gas in the canister 100 through a vaporization process includetetrakis(dimethylamino) titanium (TDMAT),tertbutyliminotris(diethylamino) tantalum (TBTDET), andpentakis(ethylmethylamino) tantalum (PEMAT), among others. The housing220 is generally fabricated from a material substantially inert to theprecursor materials 214 and gas produced therefrom, and thus, thematerial of construction may vary based on gas being produced. In oneembodiment, tungsten hexacarbonyl is generated within the canister 100and the housing 220 is fabricated from a material substantially inert totungsten hexacarbonyl, for example, stainless steel, aluminum, PFA, orother suitable non-organic material.

The housing 220 may have any number of geometric forms. In theembodiment depicted in FIGS. 2A and 2B, the housing 220 comprises acylindrical sidewall 202 and a bottom 232 sealed by a lid 204. The lid204 may be coupled to the sidewall 202 by welding, bonding, adhesives,or other leak-tight method. Alternately, the joint between the sidewall202 and the lid 204 may have a seal, o-ring, gasket, or the like,disposed therebetween to prevent leakage from the canister 100. Thesidewall 202 may alternatively comprise other hollow geometric forms,for example, a hollow square tube.

An inlet port 206 and an outlet port 208 are formed through the canisterto allow gas flow into and out of the canister 100. The ports 206, 208may be formed through the lid 204 and/or sidewall 202 of the canister100. The ports 206, 208 are generally sealable to allow the interior ofthe canister 100 to be isolated from the surrounding environment duringremoval of the canister 100 from the gas delivery system 104. In oneembodiment, valves 112, 114 are sealingly coupled to ports 206, 208 toprevent leakage from the canister 100 when removed from the gas deliverysystem 104 (shown in FIG. 1) for recharging of the precursor material214 or replacement of the canister 100. Mating disconnect fittings 236A,236B may be coupled to valves 112, 114 to facilitate removal andreplacement of the canister 100 to and from the gas delivery system 104.Valves 112, 114 are typically ball valves or other positive sealingvalves that allows the canister 100 to be removed from the systemefficiently loaded and recycled while minimizing potential leakage fromthe canister 100 during filling, transport, or coupling to the gasdelivery system 104. Alternatively, the canister 100 can be refilledthrough a refill port (not shown) such as a small tube with a VCRfitting disposed on the lid 204 of the canister 100.

The canister 100 has an interior volume 238 having an upper region 218and a lower region 234. The lower region 234 of canister 100 is at leastpartially filled with the precursor materials 214. Alternately, a liquid216 may be added to a solid precursor material 214 to form a slurry 212.The precursor materials 214, the liquid 216, or the premixed slurry 212may be introduced into canister 100 by removing the lid 204 or throughone of the ports 206, 208. The liquid 216 is selected such that it isnon-reactive with the precursor materials 214, that the precursormaterials 214 are insoluble therein, and that the liquid 216 has anegligible vapor pressure compared to the precursor materials 214. Forexample, a liquid 216 added to a solid precursor material 214 such astungsten hexacarbonyl should have a higher vapor pressure than thetungsten hexacarbonyl by greater than about 1×10³ Torr to ensure thatthe sublimating vapor comprises mainly tungsten hexacarbonyl and only anegligible quantity of liquid.

Precursor materials 214 mixed with the liquid 216 may be sporadicallyagitated to keep the precursor materials 214 suspended in the liquid 216in the slurry 212. In one embodiment, precursor materials 214 and theliquid 216 are agitated by a magnetic stirrer 240. The magnetic stirrer240 includes a magnetic motor 242 disposed beneath the bottom 232 of thecanister 100 and a magnetic pill 244 disposed in the lower region 234 ofthe canister 100. The magnetic motor 242 operates to rotate the magneticpill 244 within the canister 100, thereby mixing the slurry 212. Themagnetic pill 244 should have an outer coating of material that is anon-reactive with the precursor materials 214, the liquid 216, or thecanister 100. Suitable magnetic mixers are commercially available. Oneexample of a suitable magnetic mixer is IKAMAG® REO available from IKA®Works in Wilmington, N.C. Alternatively, the slurry 212 may be agitatedother means, such as by a mixer, a bubbler, or the like.

The agitation of the liquid 216 may induce droplets of the liquid 216 tobecome entrained in the carrier gas and carried toward the processingchamber 106. To prevent such droplets of liquid 216 from reaching theprocessing chamber 106, an oil trap 250 may optionally be coupled to theexit port 208 of the canister 100. The oil trap 250 includes a body 252containing a plurality of interleaved baffles 254 which extend past acenterline 256 of the oil trap body 252 and are angled at least slightlydownward towards the canister 100. The baffles 254 force the gas flowingtowards the processing chamber 106 to flow a tortuous path around thebaffles 254. The surface area of the baffles 254 provides a largesurface area exposed to the flowing gas to which oil droplets that maybe entrained in the gas adhere to. The downward angle of the baffles 254allows any oil accumulated in the oil trap to flow downward and backinto the canister 100.

The canister 100 includes at least one baffle 210 disposed within theupper region 218 of the canister 100. The baffle 210 is disposed betweeninlet port 206 and outlet port 208, creating an extended mean flow path,thereby preventing direct (i.e., straight line) flow of the carrier gasfrom the inlet port 206 to the outlet port 208. This has the effect ofincreasing the mean dwell time of the carrier gas in the canister 100and increasing the quantity of sublimated or vaporized precursor gascarried by the carrier gas. Additionally, the baffles 210 direct thecarrier gas over the entire exposed surface of the precursor material214 disposed in the canister 100, ensuring repeatable gas generationcharacteristics and efficient consumption of the precursor materials214.

The number, spacing and shape of the baffles 210 may be selected to tunethe canister 100 for optimum generation of precursor gas. For example, agreater number of baffles 210 may be selected to impart higher carriergas velocities at the precursor material 214 or the shape of the baffles210 may be configured to control the consumption of the precursormaterial 214 for more efficient usage of the precursor material.

The baffle 210 may be attached to the sidewall 202 or the lid 204, orthe baffle 210 may be a prefabricated insert designed to fit within thecanister 100. In one embodiment, the baffles 210 disposed in thecanister 100 comprise five rectangular plates fabricated of the samematerial as the sidewall 202. Referring to FIG. 2B, the baffles 210 arewelded or otherwise fastened to the sidewall 202 parallel to each other.The baffles 210 are interleaved, fastened to opposing sides of thecanister in an alternating fashion, such that a serpentine extended meanflow path is created. Furthermore, the baffles 210 are situated betweenthe inlet port 206 and the outlet port 208 on the lid 204 when placed onthe sidewall 202 and are disposed such that there is no air spacebetween the baffles 210 and the lid 204. The baffles 210 additionallyextend at least partially into the lower region 234 of the canister 100,thus defining an extended mean flow path for the carrier gas flowingthrough the upper region 218.

Optionally, an inlet tube 222 may be disposed in the interior volume 238of the canister 100. The tube 222 is coupled by a first end 224 to theinlet port 206 of the canister 100 and terminates at a second end 226 inthe upper region 218 of the canister 100. The tube 222 injects thecarrier gas into the upper region 218 of the canister 100 at a locationcloser to the precursor materials 214 or the slurry 212.

Optionally, an inlet tube 222 may be disposed in the interior volume 238of the canister 100. The tube 222 is coupled by a first end 224 to theinlet port 206 of the canister 100 and terminates at a second end 226 inthe upper region 218 of the canister 100. The tube 222 injects thecarrier gas into the upper region 218 of the canister 100 at a locationcloser to the precursor materials 214 or the slurry 212.

The precursor materials 214 generate a precursor gas at a predefinedtemperature and pressure. Sublimating or vaporized gas from theprecursor materials 214 accumulate in the upper region 218 of thecanister 100 and are swept out by an inert carrier gas entering throughinlet port 206 and exiting outlet port 208 to be carried to theprocessing chamber 106. In one embodiment, the precursor materials 214are heated to a predefined temperature by a resistive heater 230disposed proximate to the sidewall 202. Alternately, the precursormaterials 214 may be heated by other means, such as by a cartridgeheater (not shown) disposed in the upper region 218 or the lower region234 of the canister 100 or by preheating the carrier gas with a heater(not shown) placed upstream of the carrier gas inlet port 206. Tomaximize uniform heat distribution throughout the slurry 212, the liquid216 and the baffles 210 should be good conductors of heat.

In one exemplary mode of operation, the lower region 234 of the canister100 is at least partially filled with a mixture of tungsten hexacarbonyland diffusion pump oil to form the slurry 212. The slurry 212 is held ata pressure of about 5 Torr and is heated to a temperature in the rangeof about 40° C. to about 50° C. by a resistive heater 230 locatedproximate to the canister 100. Carrier gas in the form of argon isflowed through inlet port 206 into the upper region 218 at a rate ofabout 200 standard cc/min. The argon flows in an extended mean flow pathdefined by the tortuous path through the baffles 210 before exiting thecanister 100 through outlet port 208, advantageously increasing the meandwell time of the argon in the upper region 218 of the canister 100. Theincreased dwell time in the canister 100 advantageously increases thesaturation level of sublimated tungsten hexacarbonyl vapors within thecarrier gas. Moreover, the tortuous path through the baffles 210advantageously exposes the substantially all of the exposed surface areaof the precursor material 214 to the carrier gas flow for uniformconsumption of the precursor material 214 and generation of theprecursor gas.

FIG. 3 depicts a sectional view of another embodiment of a canister 300for generating a process gas. The canister includes a sidewall 202, alid 204 and a bottom 232 enclosing an interior volume 238. At least oneof the lid 204 or sidewall 202 contains an inlet port 206 and an outletport 208 for gas entry and egress. The interior volume 238 of thecanister 300 is split into an upper region 218 and a lower region 234.Precursor materials 214 at least partially fill the lower region 234.The precursor materials 214 may be in the form of a solid, liquid orslurry, and are adapted to generate a process gas by sublimation and/orvaporization.

A tube 302 is disposed in the interior volume 238 of the canister 300and is adapted to direct a flow of gas within the canister 300 away fromthe precursor materials 214, advantageously preventing gas flowing outof the tube 302 from directly impinging the precursor materials 214 andcausing particulates to become airborne and carried through the outletport 208 and into the processing chamber 106. The tube 302 is coupled ata first end 304 to the inlet port 206. The tube 302 extends from thefirst end 304 to a second end 326A that is positioned in the upperregion 218 above the precursor materials 214. The second end 326A may beadapted to direct the flow of gas toward the sidewall 202, thuspreventing direct (linear or line of sight) flow of the gas through thecanister 300 between the ports 206, 208, creating an extended mean flowpath.

In one embodiment, an outlet 306 of the second end 326A of the tube 302is oriented an angle of about 150 to about 90° relative to a center axis308 of the canister 300. In another embodiment, the tube 302 has a‘J’-shaped second end 326B that directs the flow of gas exiting theoutlet 306 towards the lid 204 of the canister 300. In anotherembodiment, the tube 302 has a second end 326C having a plug or cap 310closing the end of the tube 302. The second end 326C has at least oneopening 328 formed in the side of the tube 302 proximate the cap 310.Gas, exiting the openings 328, is typically directed perpendicular tothe center axis 308 and away from the precursor materials 214 disposedin the lower region 234 of the canister 300. Optionally, an at least onebaffle 210 (shown in phantom) as described above may be disposed withinthe chamber 300 and utilized in tandem with any of the embodiments ofthe tube 302 described above.

In one exemplary mode of operation, the lower region 234 of the canister300 is at least partially filled with a mixture of tungsten hexacarbonyland diffusion pump oil to form the slurry 212. The slurry 212 is held ata pressure of about 5 Torr and is heated to a temperature in the rangeof about 40° C. to about 50° C. by a resistive heater 230 locatedproximate to the canister 300. A carrier gas in the form of argon isflowed through the inlet port 206 and the tube 302 into the upper region218 at a rate of about 200 standard cc/min. The second end 326A of thetube 302 directs the flow of the carrier gas in an extended mean flowpath away from the outlet port 208, advantageously increasing the meandwell time of the argon in the upper region 218 of the canister 300 andpreventing direct flow of carrier gas upon the precursor materials 214to minimize particulate generation. The increased dwell time in thecanister 300 advantageously increases the saturation level of sublimatedtungsten hexacarbonyl gas within the carrier gas while the decrease inparticulate generation improves product yields, conserves source solids,and reduces downstream contamination.

FIG. 4 depicts a sectional view of another embodiment of a canister 400for generating a precursor gas. The canister 400 includes a sidewall202, a lid 204 and a bottom 232 enclosing an interior volume 238. Atleast one of the lid 204 or sidewall 202 contains an inlet port 206 andan outlet port 208 for gas entry and egress. Inlet and outlet ports 206,208 are coupled to valves 112, 114 fitted with mating disconnectfittings 236A, 236B to facilitate removal of the canister 400 from thegas delivery system 104. Optionally, an oil trap 250 is coupled betweenthe outlet port 208 and the valve 114 to capture any oil particulatethat may be present in the gas flowing to the process chamber 106.

The interior volume 238 of the canister 300 is split into an upperregion 218 and a lower region 234. Precursor materials 214 and a liquid216 at least partially fill the lower region 234. A tube 402 is disposedin the interior volume 238 of the canister 400 and is adapted to directa first gas flow F₁ within the canister 400 away from the precursormaterial and liquid mixture and to direct a second gas flow F₂ throughthe mixture. The flow F₁ is much greater than the flow F₂. The flow F₂is configured to act as a bubbler, being great enough to agitate theprecursor material and liquid mixture but not enough to cause particlesor droplets of the precursor materials 214 or liquid 216 from becomingairborne. Thus, this embodiment advantageously agitates the precursormaterial and liquid mixture while minimizing particulates produced dueto direct impingement of the gas flowing out of the tube 402 on theprecursor materials 214 from becoming airborne and carried through theoutlet port 208 and into the processing chamber 106.

The tube 402 is coupled at a first end 404 to the inlet port 206. Thetube 402 extends from the first end 404 to a second end 406 that ispositioned in the lower region 234 of the canister 400, within theprecursor material and liquid mixture. The tube 402 has an opening 408disposed in the upper region 218 of the canister 400 that directs thefirst gas flow F₁ towards a sidewall 202 of the canister 400. The tube400 has a restriction 410 disposed in the upper region 238 of thecanister 400 located below the opening 408. The restriction 410 servesto decrease the second gas flow F₂ flowing toward the second end 406 ofthe tube 402 and into the slurry 212. By adjusting the amount of therestriction, the relative rates of the first and second gas flows F₁ andF₂ can be regulated. This regulation serves at least two purposes.First, the second gas flow F₂ can be minimized to provide just enoughagitation to maintain suspension or mixing of the precursor materials214 in the liquid 216 while minimizing particulate generation andpotential contamination of the processing chamber 106. Second, the firstgas flow F₁ can be regulated to maintain the overall flow volumenecessary to provide the required quantity of sublimated and/or vaporsfrom the precursor materials 214 to the processing chamber 106.

Optionally, an at least one baffle 210 (shown in phantom) as describedabove may be disposed within the chamber 400 and utilized in tandem withany of the embodiments of the tube 402 described above.

While the foregoing is directed to the preferred embodiment of thepresent invention, other and further embodiments of the invention may bedevised without departing from the basic scope thereof. The scope of theinvention is determined by the claims that follow.

1. An apparatus for generating a gaseous chemical precursor used in avapor deposition processing system, comprising: a canister comprising asidewall, a top, and a bottom encompassing an interior volume therein;an inlet port and an outlet port in fluid communication with theinterior volume; an inlet tube extending from the inlet port into thecanister; a plurality of baffles within the interior volume extendingbetween the top and the bottom of the canister; and a precursor slurrycontained within the interior volume, wherein the precursor slurrycomprises a solid precursor material and a thermally conductive materialthat is unreactive towards the solid precursor material.
 2. Theapparatus of claim 1, wherein the thermally conductive material has anegligible vapor pressure relative to the vapor pressure of the solidprecursor material.
 3. The apparatus of claim 1, wherein the solidprecursor material has a vapor pressure higher than the vapor pressureof the thermally conductive material.
 4. The apparatus of claim 3,wherein the vapor pressure of the solid precursor material is greaterthan about 1×10³ Torr the vapor pressure of the thermally conductivematerial.
 5. The apparatus of claim 1, wherein the solid precursormaterial comprises pentakis(dimethylamino) tantalum.
 6. The apparatus ofclaim 1, wherein the baffles are thermal conductors.
 7. The apparatus ofclaim 6, wherein the baffles comprise a material selected from the groupconsisting of steel, stainless steel, and aluminum.
 8. The apparatus ofclaim 6, wherein the baffles extend parallel or substantially parallelto the inlet tube.
 9. The apparatus of claim 6, wherein the baffles aredisposed between the inlet port and the outlet port.
 10. The apparatusof claim 9, wherein the baffles are positioned to form a tortuous flowpath from the inlet port to the outlet port around the baffles.
 11. Theapparatus of claim 6, wherein the baffles extend from a prefabricatedinsert within the canister.
 12. The apparatus of claim 1, wherein theinlet tube comprises an outlet positioned to direct a gas flow away fromthe outlet port.
 13. The apparatus of claim 12, wherein the outlet ofthe inlet tube is positioned to direct the gas flow towards the sidewallof the canister.
 14. The apparatus of claim 12, wherein the outlet ofthe inlet tube is positioned to direct the gas flow away from the solidprecursor material.
 15. The apparatus of claim 12, wherein the outlet ofthe inlet tube is positioned to direct the gas flow at an angle within arange from about 15° to about 90° relative to a center axis of thecanister.
 16. The apparatus of claim 1, wherein the canister comprisesat least two valves.
 17. The apparatus of claim 16, wherein the canistercomprises three valves.
 18. The apparatus of claim 16, wherein a firstvalve is coupled to the canister and the first valve is positionedbetween the canister and a carrier gas source.
 19. The apparatus ofclaim 18, wherein the first valve is coupled to the inlet port of thecanister.
 20. The apparatus of claim 18, wherein a second valve iscoupled to the canister and the second valve is positioned between thecanister and a process chamber.
 21. The apparatus of claim 20, whereinthe second valve is coupled to the outlet port of the canister.
 22. Theapparatus of claim 20, wherein the first valve and the second valve arefitted with disconnect fittings.
 23. The apparatus of claim 20, whereina third valve is positioned between the second valve and the processchamber.
 24. The apparatus of claim 1, wherein the canister furthercomprises a refill port comprising a tube and a VCR fitting.
 25. Theapparatus of claim 1, wherein the canister further comprises a resistiveheater disposed proximate the sidewall of the canister.
 26. An apparatusfor generating a gaseous chemical precursor used in a vapor depositionprocessing system, comprising: a canister comprising a sidewall, a top,and a bottom encompassing an interior volume therein; an inlet port andan outlet port in fluid communication with the interior volume; an inlettube extending from the inlet port into the canister; and a precursorslurry contained within the interior volume, wherein the precursorslurry comprises a solid precursor material and a non-reactive materialthat is unreactive towards the solid precursor material.
 27. Theapparatus of claim 26, wherein the non-reactive material is thermallyconductive.
 28. The apparatus of claim 27, wherein the solid precursormaterial comprises pentakis(dimethylamino) tantalum.
 29. The apparatusof claim 26, further comprising a plurality of baffles within theinterior volume extending between the top and the bottom of thecanister.
 30. The apparatus of claim 29, wherein the baffles are thermalconductors.
 31. The apparatus of claim 30, wherein the baffles comprisea material selected from the group consisting of steel, stainless steel,and aluminum.
 32. The apparatus of claim 29, wherein the baffles arepositioned to form a tortuous flow path from the inlet port to theoutlet port around the baffles.
 33. The apparatus of claim 29, whereinthe baffles extend from a prefabricated insert within the canister. 34.An apparatus for generating a gaseous chemical precursor used in a vapordeposition processing system, comprising: a canister comprising asidewall, a top, and a bottom encompassing an interior volume therein;an inlet port and an outlet port in fluid communication with theinterior volume; a plurality of baffles within the interior volumeextending between the top and the bottom of the canister; and aprecursor slurry contained within the interior volume, wherein theprecursor slurry comprises a solid precursor material and a non-reactivematerial that is unreactive towards the solid precursor material. 35.The apparatus of claim 34, wherein the non-reactive material isthermally conductive.
 36. The apparatus of claim 35, wherein the solidprecursor material comprises pentakis(dimethylamino) tantalum.
 37. Theapparatus of claim 34, further comprising a plurality of baffles withinthe interior volume extending between the top and the bottom of thecanister.
 38. The apparatus of claim 37, wherein the baffles are thermalconductors.
 39. The apparatus of claim 38, wherein the baffles comprisea material selected from the group consisting of steel, stainless steel,and aluminum.
 40. The apparatus of claim 37, wherein the baffles arepositioned to form a tortuous flow path from the inlet port to theoutlet port around the baffles.
 41. The apparatus of claim 37, whereinthe baffles extend from a prefabricated insert within the canister. 42.An apparatus for generating a gaseous chemical precursor used in a vapordeposition processing system, comprising: a canister comprising asidewall, a top, and a bottom encompassing an interior volume therein;an inlet port and an outlet port in fluid communication with theinterior volume; an inlet tube extending from the inlet port into thecanister; a plurality of baffles within the interior volume extendingbetween the top and the bottom of the canister; and a precursor slurrycontained within the interior volume, wherein the precursor slurrycomprises a solid precursor material and a non-reactive material that isunreactive towards the solid precursor material.
 43. The apparatus ofclaim 42, wherein the non-reactive material is thermally conductive. 44.The apparatus of claim 43, wherein the solid precursor materialcomprises pentakis(dimethylamino) tantalum.
 45. The apparatus of claim42, wherein the baffles comprise a material selected from the groupconsisting of steel, stainless steel, and aluminum.
 46. The apparatus ofclaim 43, wherein the baffles are positioned to form a tortuous flowpath from the inlet port to the outlet port around the baffles.
 47. Anapparatus for generating a gaseous chemical precursor used in a vapordeposition processing system, comprising: a canister comprising asidewall, a top, and a bottom encompassing an interior volume therein;an inlet port and an outlet port in fluid communication with theinterior volume; an inlet tube extending from the inlet port into thecanister; a plurality of baffles within the interior volume extendingbetween the top and the bottom of the canister; and a precursor slurrycontained within the interior volume, wherein the precursor slurrycomprises pentakis(dimethylamino) tantalum and a non-reactive materialthat is unreactive towards the pentakis(dimethylamino) tantalum.
 48. Anapparatus for generating a gaseous chemical precursor used in a vapordeposition processing system, comprising: a canister comprising asidewall, a top, and a bottom encompassing an interior volume therein;an inlet port and an outlet port in fluid communication with theinterior volume; and a precursor slurry contained within the interiorvolume, wherein the precursor slurry comprises a solid precursormaterial and a thermally conductive material.
 49. An apparatus forgenerating a gaseous chemical precursor used in a vapor depositionprocessing system, comprising: a canister comprising a sidewall, a top,and a bottom encompassing an interior volume therein; an inlet port andan outlet port in fluid communication with the interior volume; an inlettube extending from the inlet port into the canister; and a plurality ofbaffles within the interior volume extending between the top and thebottom of the canister, wherein the baffles are positioned to form atortuous flow path from the inlet port to the outlet port around thebaffles.
 50. The apparatus of claim 49, wherein a precursor slurry iscontained within the interior volume, and the precursor slurry comprisesa solid precursor material and a thermally conductive material that isunreactive towards the solid precursor material.
 51. A method forgenerating a gaseous chemical precursor used in a vapor depositionprocessing system, comprising: providing an ampoule assembly,comprising: a canister comprising a sidewall, a top, and a bottomencompassing an interior volume therein; an inlet port and an outletport in fluid communication with the interior volume; a plurality ofbaffles within the interior volume extending between the top and thebottom of the canister; and a precursor slurry contained within theinterior volume, wherein the precursor slurry comprises a solidprecursor material and a thermally conductive material that isunreactive towards the solid precursor material; heating the canister toa predetermined temperature; flowing a carrier gas into the canisterthrough the inlet port; subliming the solid precursor material to form aprocess gas comprising a gaseous precursor material and the carrier gas;and flowing the process gas out of the canister through the outlet port.52. The method of claim 51, wherein the carrier gas is preheated priorto flowing the carrier gas into the canister.
 53. The method of claim51, wherein the carrier gas comprises argon, nitrogen, or helium. 54.The method of claim 53, wherein the solid precursor material comprisespentakis(dimethylamino) tantalum.
 55. The method of claim 54, whereinthe carrier gas comprises argon.
 56. The method of claim 51, wherein theprecursor slurry is heated by a resistive heater disposed proximate thesidewall of the canister.
 57. The method of claim 51, wherein thebaffles are positioned to form a tortuous flow path from the inlet portto the outlet port around the baffles.
 58. The method of claim 51,wherein an inlet tube extends from the inlet port into the canister. 59.The method of claim 58, wherein the inlet tube comprises an outletpositioned to direct a gas flow away from the outlet port.
 60. Themethod of claim 59, wherein the outlet of the inlet tube is positionedto direct the gas flow towards the sidewall of the canister.
 61. Themethod of claim 59, wherein the outlet of the inlet tube is positionedto direct the gas flow away from the precursor slurry.
 62. The method ofclaim 59, wherein the outlet of the inlet tube is positioned to directthe gas flow at an angle within a range from about 15° to about 90°relative to a center axis of the canister.
 63. The method of claim 51,wherein the precursor slurry is a premixed slurry that is added into thecanister.
 64. The method of claim 51, wherein the slurry is formedwithin the canister.